ldmos
网络释义：横向扩散金属氧化物半导体(laterally-diffused metal oxide semiconductor)；Lateral Diffused Metal Oxide Semiconductor；横向扩散金属氧化硅
网络释义
1.横向扩散金属氧化物半导体(laterally-diffused metal oxide semiconductor) LCA fileFPGA 实现文件。 LDMOS 横向扩散金属氧化硅（场效应晶体管） LDT 查看 闪电数据传输 ...
4.横向扩散金氧半电晶体 ... 电子工程研究所 GH029663553 横向扩散金氧半场效电晶体 LDMOS 戴冠宇 Tai,Kua…
6.横向扩散金属氧化物监视· 放大器尺寸比使用硅双极结晶体管(Si BJT)或横向扩散金属氧化物监视(LDMOS)器件的产品减小50%封装和供货： 2729GN-50…
例句释义:,横向扩散金属氧化硅1.The invention provides an LDMOS device capable of improving breakdown voltage and a manufacturing method thereof.本发明提供了一种可提高击穿电压的LDMOS器件及其制造方法。
2.This model is an aid to understand the device physics during on-state accurately and it also directs high voltage LDMOS design.该模型有助于深入理解LDMOS开态击穿的物理过程，可用于指导高压LDMOS的设计。
3.The relation between the maximum temperature and the switching condition of an LDMOST under different frequencies is studied.研究了LDMOS器件内部的最高温度与开关频率之间的关系。
4.The compatibipty of BCD process integration was discussed. We focused on the principle and concerns on LDMOS technology.对BCD工艺兼容性进行了说明，着重阐述了LDMOS的工艺原理和关键工艺设计考虑。
5.The methods for every resistance are given out in details according to the structure of LDMOS.根据LDMOS的结构特点分别给出了各个电阻的具体计算方法。
6.The process for this new structure is compatible with the normal P type LDMOS.根据以上结构制定新工艺，该工艺与常规P型LDMOS兼容。
7.An accurate expression of LDMOS on-resistance is obtained in the end.最后给出了精确的LDMOS导通电阻表达式。
8.Design and Implementation of a High-Voltage LDMOS Operational Amppfier一种LDMOS高压运算放大器的设计与实现
9.An Analytical Model of a LDMOS On-Resistance Using a Well as a High Resistance Drift Region用阱作高阻漂移区的LDMOS导通电阻的解析模型
10.Influence of Gate Voltages on Temperature of LDMOS Under Ultra-High Transient Currents栅压对LDMOS在瞬态大电流下工作的温度影响